SRAM and flash memory

Which correctly describes "write amplification" in an SSD?

  1. AThe write speed doubling
  2. BThe write voltage becoming higher than normal
  3. CThe amount of data actually written to flash exceeding the amount written by the host
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Answer: C. The amount of data actually written to flash exceeding the amount written by the host

Because flash cannot be overwritten and is erased in blocks, extra writes occur, such as copying valid data to another block during garbage collection. As a result, the amount actually written exceeds what the host wrote. The larger this ratio, the shorter the life and the lower the performance.

  • A. Write amplification degrades rather than improves performance.
  • B. It has nothing to do with voltage.
  • C. Correct. More data is actually written than the host wrote.
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More SRAM and flash memory questions

  1. What is the basic unit for reading and writing (programming) in NAND flash memory?
  2. Which interface standard, built on PCI Express, is widely used to connect high-speed SSDs to the host?
  3. In SRAM, which correctly describes the "data retention voltage" that sets the lower limit when the supply is lowered during standby to reduce leakage?
  4. In a 6T SRAM cell, which design is needed so that the cell contents are not flipped during a read (to prevent read upset)?
  5. Which is an example of a "write assist" technique to prevent SRAM write failures at low voltage?