Power semiconductors

When SiC or GaN power devices switch at high speed, which problem particularly needs countermeasures?

  1. ANoise (EMI) and surge voltages caused by rapid changes in voltage and current
  2. BThe device emitting light
  3. CSwitching becoming too slow
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Answer: A. Noise (EMI) and surge voltages caused by rapid changes in voltage and current

In high-speed switching, voltage and current change very rapidly, so surge voltages due to the parasitic inductance of wiring and electromagnetic noise (EMI) tend to grow. Countermeasures include shortening wiring to reduce parasitic inductance and adjusting the gate drive.

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More Power semiconductors questions

  1. If the current in a wire with a parasitic inductance of 10 nH changes by 10 A in 10 ns, approximately what voltage is induced?
  2. What is the purpose of a power factor correction (PFC) circuit used in power supplies?
  3. What is the main advantage of using SiC power devices in electric vehicle inverters?
  4. In an ideal step-down chopper (buck converter) with an input voltage of 12 V and a switch duty cycle of 0.25, what is the output voltage?
  5. Which DC-DC converter outputs a DC voltage higher than its input?