Power Management

DRAM operated at high temperature may require shorter refresh intervals. Which pairs the reason with the effect on power correctly?

  1. AAt high temperature cell charge increases, so refreshes and power decrease
  2. BTemperature and refresh interval are unrelated
  3. CAt high temperature cell leakage rises and charge is lost faster, so refreshes increase and so does power
Show answer and explanation

Answer: C. At high temperature cell leakage rises and charge is lost faster, so refreshes increase and so does power

DRAM cells hold information as charge on capacitors, and rising temperature increases leakage so charge drains faster. To avoid losing data, refresh must occur more often, and many standards halve the refresh interval in the high-temperature range. Refresh power rises accordingly, and so does the time the DRAM is unavailable during refresh, so cooling also affects DRAM power and performance.

  • A. Charge is lost faster, not gained.
  • B. It depends strongly on temperature.
  • C. Correct. Standards commonly double the refresh rate above 85°C.
Practice this topic Back to topic

More Power Management questions

  1. To cut power on a microcontroller, what should be done with unused peripherals such as timers and UARTs?
  2. What is the role of a PMIC (power management IC) used in smartphones and similar devices?
  3. In chips using multiple supply voltages, why must the power-up order (power sequencing) be observed?
  4. What characterizes near-threshold operation, running with supply voltage lowered close to the transistor threshold?
  5. As supply voltage is lowered, total energy per operation reaches a minimum at some voltage and then rises if voltage is lowered further. Why?