Oxidation and diffusion

Which method reacts hydrogen and oxygen near the wafer surface to form a high-quality thin oxide in a short time?

  1. ASputtering
  2. BISSG (in-situ steam generation) oxidation
  3. CAtomic layer etching
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Answer: B. ISSG (in-situ steam generation) oxidation

In ISSG oxidation, hydrogen and oxygen react near the surface of a heated wafer in a low-pressure chamber. The resulting water vapor and oxygen radicals form a high-quality thin oxide quickly, and corners are oxidized with rounded profiles, so it is used for STI liner oxides and similar applications.

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More Oxidation and diffusion questions

  1. What is the treatment called that introduces plasma-generated nitrogen into the surface of a thin gate oxide?
  2. When etched in the same dilute hydrofluoric acid, how do the etch rates of thermal oxide and CVD oxide generally compare?
  3. Which defect grows when excess interstitial silicon generated by oxidation is injected into the silicon during thermal oxidation?
  4. If the thermal oxidation temperature is raised, how does the oxide thickness obtained in the same time change?
  5. In LOCOS (local oxidation), what is the phenomenon called in which oxide encroaches like a bird's beak under the edge of the nitride mask?