MOSFET
What is the purpose of the LDD (lightly doped drain) structure in a MOSFET?
- ATo lower the resistance of the gate electrode
- BTo lower the doping at the drain edge, relax the electric field, and suppress degradation by hot carriers
- CTo double the channel mobility
Show answer and explanation
Answer: B. To lower the doping at the drain edge, relax the electric field, and suppress degradation by hot carriers
The electric field is strong near the drain, and high-energy carriers (hot carriers) are injected into the gate insulator, degrading the device characteristics. In the LDD structure, a lightly doped region on the channel side of the drain relaxes the field and suppresses this degradation.