Metrology and analysis

Which spectroscopic method is often used to evaluate stress (strain) in silicon locally and non-destructively?

  1. ARaman spectroscopy
  2. BFour-point probe
  3. CC-V measurement
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Answer: A. Raman spectroscopy

Raman spectroscopy measures light scattered with a slight wavelength shift due to interaction with lattice vibrations when a laser is applied (Raman scattering). Stress in silicon changes this shift (the Raman shift), so strain in transistor channels and stress from packaging can be evaluated locally.

  • A. Correct. Stress is evaluated from the Raman shift.
  • B. The four-point probe measures resistivity.
  • C. C-V measurement measures the capacitance of MOS structures.
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