Ion implantation

Why is BF2⁺ sometimes implanted instead of boron alone to form shallow p-type layers?

  1. ABecause BF2⁺ acts as an n-type dopant
  2. BBecause BF2⁺ makes the equipment cheaper
  3. CBecause the molecular ion is heavy, so boron goes in shallower at the same acceleration energy
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Answer: C. Because the molecular ion is heavy, so boron goes in shallower at the same acceleration energy

Boron is light and tends to go deep even at low energy. When implanted as BF2⁺, the whole molecule is heavy, so the energy shared by the boron atom is small and it goes in shallower. Because very-low-energy beams are hard to handle, this method has been used.

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More Ion implantation questions

  1. What is the phenomenon called in which diffusion of boron and other dopants is temporarily accelerated early in annealing because of interstitial silicon created by implantation?
  2. Which type of ion implanter is used to implant large doses in a short time, as for source/drain formation?
  3. Under the same annealing conditions, how does the sheet resistance of the implanted layer generally change when the implant dose is increased?
  4. What must be considered when using photoresist as a mask for ion implantation?
  5. What is an advantage of plasma doping, in which the wafer is exposed directly to a dopant-containing plasma and implanted with low-energy ions?