Interconnect processes

What is the purpose of forming silicides such as NiSi on the surfaces of a transistor's source, drain and gate?

  1. ATo insulate the electrodes
  2. BTo make the surface shine for easier inspection
  3. CTo reduce the resistance and contact resistance of the electrodes
Show answer and explanation

Answer: C. To reduce the resistance and contact resistance of the electrodes

Silicides are compounds of metal and silicon with much lower resistance than silicon. Siliciding the surfaces of the source, drain and gate lowers sheet resistance and contact resistance to the wiring. Forming silicide self-aligned to the gate and other areas is called salicide.

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More Interconnect processes questions

  1. Which metal has been widely used to fill contact holes connecting transistors to the lowest wiring layer?
  2. When copper wires become very narrow, what is the main reason their effective resistivity rises?
  3. In multilevel interconnects, what is the main reason upper-level wires are made wider and thicker?
  4. What is the main purpose of the technique that makes part of the insulator between wires a cavity (air gap)?
  5. Which correctly describes backside power delivery, which is being introduced in advanced logic?