Epitaxial growth

What is it called when doping gas is flowed during epitaxial growth to add dopants at the same time as growth?

  1. AIn-situ doping
  2. BIon implantation
  3. CGettering
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Answer: A. In-situ doping

In-situ doping incorporates dopants during growth, so there is no crystal damage as with ion implantation, and precise depth profiles can be created. It is used in the source/drain epitaxial layers of advanced transistors.

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More Epitaxial growth questions

  1. What is the periodic structure called in which layers of different materials, each only a few nm thick, are stacked alternately?
  2. Which technology is used to form the base layer of a SiGe HBT?
  3. Compared with thermal diffusion, what is an advantage of adding dopants during epitaxial growth?
  4. In advanced CMOS processes, why is it necessary to lower the temperature of silicon and SiGe epitaxial growth?
  5. Which polytype is mainly used for SiC power devices?