Compound semiconductors

What is the advantage of growing InGaAs, with its composition adjusted, lattice-matched on an InP substrate?

  1. AThe substrate always becomes cheaper
  2. BMatching the lattice constants yields high-quality crystals with few dislocations
  3. CIt always becomes an indirect-gap material
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Answer: B. Matching the lattice constants yields high-quality crystals with few dislocations

Adjusting the composition, as in In0.53Ga0.47As, makes the lattice constant of InGaAs almost equal to that of InP. With matched lattice constants, strain and dislocations are unlikely, and high-quality crystals can be grown even in thick layers. It is used in optical communication photodetectors, HEMTs and more.

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