Silicon wafers

In CZ crystals, what are the periodic, striped variations in dopant or oxygen concentration caused by fluctuations such as temperature at the growth interface called?

  1. AStriations (growth bands)
  2. BNotch
  3. CFacets
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Answer: A. Striations (growth bands)

When the crystal is pulled while rotating, convection and temperature fluctuations in the melt periodically change how much impurity is incorporated at the growth interface. The result is striations, striped variations in dopant or oxygen concentration, which cause small variations in resistivity.

  • A. Correct. They are periodic, striped concentration variations.
  • B. A notch is a cut in the wafer edge.
  • C. Facets are flat crystal faces.
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More Silicon wafers questions

  1. Along which crystal planes does single-crystal silicon cleave most easily?
  2. Which method is most widely used to produce single-crystal silicon for LSIs?
  3. Which wafer diameter is currently mainstream in leading-edge logic and memory production lines?
  4. Which is a characteristic of single-crystal silicon made by the FZ (floating zone) method?
  5. What is the main role of the notch (small cutout) on the edge of a silicon wafer?