SRAM and flash memory

In 3D NAND, what is the main advantage of placing peripheral circuits such as sense amplifiers beneath the memory array (CMOS under Array and similar)?

  1. AIt makes erasing unnecessary
  2. BIt reduces chip area, increasing the capacity obtained from one wafer
  3. CIt reduces the number of stacked layers
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Answer: B. It reduces chip area, increasing the capacity obtained from one wafer

Peripheral circuits used to sit beside the cell array, but placing them directly underneath reduces chip area accordingly. This increases bit density and lowers cost. Because the array is built on top after the peripheral circuits, care is needed with the thermal budget and similar factors.

  • A. Erasing is still required regardless of the structure.
  • B. Correct. Placing peripherals under the array reduces area.
  • C. It is not directly related to the number of layers.
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More SRAM and flash memory questions

  1. Which correctly describes the structure of a typical six-transistor SRAM cell?
  2. Compared with NOR flash, which is a characteristic of NAND flash memory?
  3. In flash memory, what is the scheme that stores 3 bits of information in one memory cell called?
  4. Which correctly describes how data is written to and erased from flash memory?
  5. Which correctly describes 3D NAND flash memory?