Lithography

Which correctly describes positive photoresist?

  1. AExposed areas remain after development
  2. BExposed areas dissolve and are removed during development
  3. CEverything dissolves during development regardless of exposure
Show answer and explanation

Answer: B. Exposed areas dissolve and are removed during development

In positive resist, exposed areas become more soluble in the developer and are removed during development, so the pattern remains where the mask blocked the light. Resist in which exposed areas remain is negative resist.

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More Lithography questions

  1. Which correctly describes ArF immersion lithography?
  2. Which correctly describes double patterning (multiple patterning)?
  3. How does the depth of focus (DOF) generally change when the numerical aperture (NA) of an exposure tool is increased?
  4. Which correctly describes OPC (optical proximity correction)?
  5. What is the purpose of a phase-shift mask?