Ion implantation

Singly charged ions are implanted into a wafer area of 100 cm² at a dose of 1×10¹⁵ ions/cm². With a beam current of 1 mA, approximately how long does the implant take? (Elementary charge 1.6×10⁻¹⁹ C)

  1. AAbout 160 seconds
  2. BAbout 1.6 seconds
  3. CAbout 16 seconds
Show answer and explanation

Answer: C. About 16 seconds

The total number of ions is 1×10¹⁵ × 100 = 1×10¹⁷, with a charge of 1×10¹⁷ × 1.6×10⁻¹⁹ = 1.6×10⁻² C. Dividing by the current, 1 mA = 1×10⁻³ C/s, gives 16 seconds. In practice, beam that falls outside the wafer is also taken into account.

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More Ion implantation questions

  1. In CMOS well formation, what is a well called in which high-energy implantation makes the dopant concentration higher deep below the surface?
  2. What is the main purpose of halo (pocket) implants, which implant dopants of the same type as the channel at an angle near the source/drain edges?
  3. Why is BF2⁺ sometimes implanted instead of boron alone to form shallow p-type layers?
  4. What is the phenomenon called in which diffusion of boron and other dopants is temporarily accelerated early in annealing because of interstitial silicon created by implantation?
  5. Which type of ion implanter is used to implant large doses in a short time, as for source/drain formation?