Epitaxial growth

Which type of reactor is mainstream for silicon epitaxial growth on 300 mm wafers?

  1. ASingle-wafer reactors processing one wafer at a time
  2. BDip systems that immerse wafers in liquid
  3. CBatch diffusion furnaces processing hundreds of wafers at once
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Answer: A. Single-wafer reactors processing one wafer at a time

For 300 mm epitaxy, single-wafer reactors that rapidly heat one wafer at a time with lamps and precisely control gas flow and temperature are mainstream. They make it easier to achieve uniform thickness and resistivity and to adjust conditions for each run.

  • A. Correct. Single-wafer reactors are mainstream.
  • B. Immersion is liquid-phase epitaxy, not used for silicon LSI epi.
  • C. Batch furnaces are used for oxidation and diffusion, but single-wafer reactors dominate 300 mm epitaxy.
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More Epitaxial growth questions

  1. In heteroepitaxy of materials with very different lattice constants, what is the purpose of inserting a "graded buffer layer" whose composition changes gradually?
  2. In the X-ray diffraction rocking curve used to evaluate the crystal quality of an epitaxial layer, what does a narrow peak width (FWHM) indicate?
  3. In MOCVD growth of GaN, what does the controlled condition "V/III ratio" mean?
  4. When a lightly doped epi layer is grown at high temperature on a heavily doped substrate, what is the phenomenon called in which substrate dopants seep into the epi layer by solid-state diffusion, smoothing the concentration change at the interface?
  5. Which technique, developed by Isamu Akasaki, Hiroshi Amano and colleagues to grow high-quality GaN on sapphire, first deposits a thin layer at low temperature and then grows GaN at high temperature?