Emerging memories

Which is a characteristic of a FeFET, which uses a ferroelectric as the gate insulator?

  1. AThe polarization direction changes the threshold voltage, so one transistor can store data non-volatilely and be read non-destructively
  2. BData is lost when the power is turned off
  3. CData is stored as charge in a capacitor
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Answer: A. The polarization direction changes the threshold voltage, so one transistor can store data non-volatilely and be read non-destructively

In a FeFET, the polarization direction of the ferroelectric changes the transistor's threshold voltage. Data is read according to whether current flows, so reads are non-destructive and do not switch the polarization. The discovery of hafnium-oxide-based ferroelectrics has advanced research toward practical use.

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More Emerging memories questions

  1. In phase-change memory (PCM), what is the phenomenon in which the resistance of the amorphous state gradually increases over time?
  2. How is data read from MRAM?
  3. What kind of material is GST, the typical recording material for phase-change memory?
  4. Which is an example of a material researched and used as the switching layer of ReRAM?
  5. Which correctly describes how using non-volatile memory for caches and registers is expected to save system power?