SRAM and flash memory

Which correctly describes the difference between EEPROM and flash memory?

  1. AEEPROM cannot be rewritten
  2. BEEPROM is volatile and flash memory is non-volatile
  3. CEEPROM can be rewritten byte by byte, while flash memory erases in larger units such as blocks
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Answer: C. EEPROM can be rewritten byte by byte, while flash memory erases in larger units such as blocks

EEPROM is non-volatile memory that can be erased and rewritten one byte at a time and suits small amounts of data such as configuration settings. Flash memory erases in bulk units such as blocks, which allows smaller cells and higher capacity.

  • A. EEPROM is electrically erasable and rewritable ROM.
  • B. Both EEPROM and flash memory are non-volatile.
  • C. Correct. They differ in rewrite granularity.
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More SRAM and flash memory questions

  1. Which correctly describes the static noise margin (SNM) that represents the stability of an SRAM cell?
  2. Which is closest to the typical endurance (number of rewrite cycles) of SLC NAND flash memory?
  3. Which correctly describes "bad block management" in NAND flash?
  4. Which correctly describes "overprovisioning" in an SSD?
  5. Which correctly describes "write amplification" in an SSD?