SRAM and flash memory

In NAND flash memory, what is needed to write new data to a page that already contains data?

  1. AErase the block containing the page first, then write
  2. BIt can simply be overwritten
  3. COverwrite it with a lower write voltage
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Answer: A. Erase the block containing the page first, then write

In NAND flash, programming can only raise a cell's threshold voltage, and erasing is needed to bring it back. Erasing can only be done in blocks larger than a page, so overwriting is impossible. SSD controllers write new data to another free page, mark the old page invalid, and erase blocks later in bulk.

  • A. Correct. Data can only be written after erasing.
  • B. NAND flash cannot be overwritten.
  • C. Lowering the voltage does not make overwriting possible.
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More SRAM and flash memory questions

  1. Which correctly describes the difference between EEPROM and flash memory?
  2. Which correctly describes the static noise margin (SNM) that represents the stability of an SRAM cell?
  3. Which is closest to the typical endurance (number of rewrite cycles) of SLC NAND flash memory?
  4. Which correctly describes "bad block management" in NAND flash?
  5. Which correctly describes "overprovisioning" in an SSD?