Reliability

Which correctly describes TDDB (time-dependent dielectric breakdown)?

  1. AA phenomenon in which current moves metal atoms in wiring
  2. BA phenomenon in which solder joints fatigue under repeated temperature changes
  3. CA phenomenon in which a gate dielectric under a continuously applied electric field breaks down after a certain time
Show answer and explanation

Answer: C. A phenomenon in which a gate dielectric under a continuously applied electric field breaks down after a certain time

TDDB (Time Dependent Dielectric Breakdown) is a phenomenon in which even an electric field too weak to cause immediate breakdown, applied for a long time, gradually creates defects in the dielectric, eventually leading to breakdown. It becomes a more important reliability item as gate dielectrics become thinner.

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More Reliability questions

  1. What does the failure-rate unit FIT mean?
  2. Which failures are mainly evaluated by temperature cycling tests?
  3. What is provided at an LSI's I/O pins as a countermeasure against ESD (electrostatic discharge)?
  4. Which degradation phenomenon causes the absolute value of a pMOS transistor's threshold voltage to gradually increase under sustained negative gate voltage and high temperature?
  5. Which correctly describes latch-up in CMOS circuits?