Process materials (gases and chemicals)

Which source gas can deposit silicon films at lower temperatures than monosilane (SiH4)?

  1. ADisilane (Si2H6)
  2. BCarbon tetrafluoride (CF4)
  3. CNitrogen (N2)
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Answer: A. Disilane (Si2H6)

Disilane contains Si-Si bonds and decomposes more readily than monosilane, so silicon and silicon-based films can be deposited at lower temperatures. It is used for low-temperature epitaxy, amorphous silicon deposition and the like.

  • A. Correct. It decomposes more readily than monosilane and deposits at low temperature.
  • B. CF4 is a gas for etching and the like, not a silicon source.
  • C. Nitrogen contains no silicon and cannot be a source.
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