MEMS and sensors
When removing an SiO2 sacrificial layer to free a MEMS structure, which method is suitable for preventing stiction?
- ARinsing with large amounts of water and letting it dry naturally
- BRemoving it by polishing
- CVapor-phase etching with hydrogen fluoride (HF) vapor
Show answer and explanation
Answer: C. Vapor-phase etching with hydrogen fluoride (HF) vapor
Removing the sacrificial layer with liquid hydrofluoric acid can cause movable parts to stick to the substrate due to surface tension during drying. Vapor-phase etching with HF vapor uses no liquid, preventing sticking from surface tension. Supercritical CO2 drying is used for the same purpose.