Ion implantation

In ion implantation, which parameter mainly determines how deep the dopants are implanted (the range)?

  1. AAcceleration energy
  2. BDose
  3. CPost-implant cleaning time
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Answer: A. Acceleration energy

Implant depth is determined mainly by the ions' acceleration energy: the higher the energy, the deeper they go. Dose is the number of ions implanted per unit area and determines dopant concentration. The ion species (mass) also affects depth; at the same energy, lighter ions go deeper.

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More Ion implantation questions

  1. What is the main purpose of annealing (heat treatment) after ion implantation?
  2. Which is a common way to suppress channeling (ions traveling too deep through gaps in the crystal) in ion implantation?
  3. Which unit is used for the dose in ion implantation?
  4. Which is a correct technique for forming shallow junctions for the sources and drains of scaled transistors?
  5. Which correctly pairs the distribution that approximates the depth profile of implanted dopants with the term for the depth of its peak?