Etching

Which correctly describes reactive ion etching (RIE)?

  1. AEtching that combines chemical reactions and ion bombardment in a plasma of reactive gases
  2. BEtching by immersing the wafer in a chemical solution
  3. CGrinding the wafer surface with a polishing pad
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Answer: A. Etching that combines chemical reactions and ion bombardment in a plasma of reactive gases

RIE is dry etching that combines chemical reactions by radicals generated in a reactive-gas plasma with bombardment by ions accelerated by an electric field. Because ions arrive vertically, vertical etching proceeds readily, enabling highly anisotropic processing.

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More Etching questions

  1. Which method is commonly used to detect the endpoint of dry etching?
  2. What is the aspect ratio of a hole or trench formed by etching?
  3. What is the phenomenon called in which the etch rate decreases as patterns become narrower and deeper?
  4. Which gases are commonly used for dry etching of polysilicon gates?
  5. What is the process called that removes photoresist by oxidizing it to ash with oxygen plasma or similar?