Epitaxial growth

In MBE, which technique observes growth in situ by directing an electron beam at the surface at a grazing angle and examining the diffraction pattern?

  1. ASIMS
  2. BRHEED (reflection high-energy electron diffraction)
  3. CXPS
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Answer: B. RHEED (reflection high-energy electron diffraction)

RHEED directs a high-energy electron beam at the growing surface at a grazing angle and observes the diffraction pattern on a fluorescent screen. It reveals surface flatness and crystal structure, and because its intensity oscillates with each atomic layer grown, the number of layers can be counted in situ. It is an observation method made possible by the ultra-high vacuum of MBE.

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More Epitaxial growth questions

  1. What is the origin of the word "epitaxy"?
  2. What is the typical thickness range of the epitaxial layer on silicon epi wafers for LSIs and power devices?
  3. In silicon epitaxial growth, what is the main role of the large flow of hydrogen (H2) supplied along with the source gas?
  4. Which method is used to grow thick GaN layers quickly to make free-standing GaN substrates?
  5. Which is closest to the density of threading dislocations, which run up to the film surface, in GaN grown on sapphire?