Emerging memories

Which ferroelectric material, compatible with CMOS processes, has recently attracted attention for FeRAM and ferroelectric transistors (FeFETs)?

  1. AHafnium oxide (HfO2)-based materials
  2. BSodium chloride
  3. CPolyethylene
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Answer: A. Hafnium oxide (HfO2)-based materials

Hafnium oxide had long been used in CMOS processes as a high-k gate insulator, and it was discovered that thin films made under certain conditions are ferroelectric. Because it is easier to scale and integrate with CMOS than conventional ferroelectric materials, it is being researched and developed as a material for new memories.

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More Emerging memories questions

  1. In phase-change memory (PCM), how is a cell put into the high-resistance amorphous state (reset)?
  2. What is the main application expected for in-memory computing using resistive memories and similar devices?
  3. Which correctly describes reading in capacitor-type FeRAM?
  4. Which material is widely used as the tunnel barrier in MRAM magnetic tunnel junctions (MTJs) and gives a large tunnel magnetoresistance ratio?
  5. In ReRAM, what is the initialization step called in which a relatively high voltage is first applied to form a conductive filament?