Emerging memories

Compared with flash memory, which is a general advantage of MRAM?

  1. AIts cost per bit is far lower
  2. BIt loses data when the power is turned off
  3. CIt can be rewritten far more times, and writes are fast
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Answer: C. It can be rewritten far more times, and writes are fast

MRAM stores information in magnetization direction, so it can be rewritten far more times than flash memory, which involves oxide degradation, and writes faster. It is being adopted as embedded memory in microcontrollers and similar devices. However, it falls short of NAND flash in capacity and cost per bit.

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More Emerging memories questions

  1. Which ferroelectric material, compatible with CMOS processes, has recently attracted attention for FeRAM and ferroelectric transistors (FeFETs)?
  2. In phase-change memory (PCM), how is a cell put into the high-resistance amorphous state (reset)?
  3. What is the main application expected for in-memory computing using resistive memories and similar devices?
  4. Which correctly describes reading in capacitor-type FeRAM?
  5. Which material is widely used as the tunnel barrier in MRAM magnetic tunnel junctions (MTJs) and gives a large tunnel magnetoresistance ratio?