DRAM

Which correctly describes a soft error in memory?

  1. AAn error in which stored data is temporarily flipped by radiation or the like, without damaging the device
  2. BA permanent failure due to a wiring defect during manufacturing
  3. CA failure in which the device breaks down due to aging
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Answer: A. An error in which stored data is temporarily flipped by radiation or the like, without damaging the device

A soft error occurs when alpha particles from package materials or neutrons originating from cosmic rays generate charge in silicon and flip stored data. The device itself is not damaged, so rewriting the data restores normal operation. Error-correcting codes (ECC) and similar measures are used.

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More DRAM questions

  1. Compared with SRAM, which is a characteristic of DRAM?
  2. Which correctly describes redundancy repair, used to improve DRAM yield?
  3. What does an error-correcting code (ECC) used in memory do?
  4. In DRAM, why is access time shorter when the same row (page) is accessed repeatedly?
  5. Why are high-k materials such as zirconium oxide used for the dielectric film of DRAM capacitors?