Deposition (CVD and PVD)

Which deposition method has mainly been used to form aluminum wiring films?

  1. AIon implantation
  2. BSputtering
  3. CThermal oxidation
Show answer and explanation

Answer: B. Sputtering

Aluminum wiring has been deposited by sputtering, in which a target of aluminum (an alloy with a little copper or similar) is bombarded with argon ions and the ejected atoms deposit on the wafer. The film is then patterned and etched into wiring.

  • A. Ion implantation introduces impurities.
  • B. Correct. Aluminum wiring has been deposited by sputtering.
  • C. Thermal oxidation forms silicon oxide films.
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More Deposition (CVD and PVD) questions

  1. What does "sputter yield" mean in sputtering?
  2. Which correctly describes silicon nitride deposited by plasma CVD?
  3. When filling a narrow trench by deposition, what problem tends to occur if film builds up thickly near the trench opening (overhang)?
  4. What is the purpose of placing a plate with many holes (a collimator) between the target and wafer in a sputtering system?
  5. In PVD such as sputtering and evaporation, why is it hard to coat the sidewalls and bottoms of deep trenches?