Deposition (CVD and PVD)

What does "sputter yield" mean in sputtering?

  1. AThe time required for deposition
  2. BThe fraction of good chips per wafer
  3. CThe number of atoms ejected per ion striking the target
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Answer: C. The number of atoms ejected per ion striking the target

Sputter yield expresses how many atoms are ejected for each ion that strikes the target. It depends on ion energy and mass, angle of incidence and target material, and is one factor that sets the deposition rate.

  • A. It is not a time.
  • B. The fraction of good chips is the yield in the manufacturing sense.
  • C. Correct. It is the number of atoms ejected per ion.
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More Deposition (CVD and PVD) questions

  1. Which correctly describes silicon nitride deposited by plasma CVD?
  2. When filling a narrow trench by deposition, what problem tends to occur if film builds up thickly near the trench opening (overhang)?
  3. What is the purpose of placing a plate with many holes (a collimator) between the target and wafer in a sputtering system?
  4. In PVD such as sputtering and evaporation, why is it hard to coat the sidewalls and bottoms of deep trenches?
  5. What is it called when a gas containing a dopant such as phosphorus is flowed during LPCVD polysilicon deposition to make a conductive film?