Conductor vs Semiconductor vs Insulator: Band Gap, Resistivity and Temperature Compared
What separates conductors, semiconductors and insulators is how many electrons are available to carry current, and band structure explains this. In a metal the conduction band is partly filled with electrons, so there are many free electrons from the start. An insulator has a large band gap, so at room temperature almost no electrons can rise into the conduction band. A semiconductor sits in between: its band gap is moderate, around 1 eV, so temperature, light and added impurities can change how easily it conducts by a large amount.
| Aspect | Conductor (metal) | Semiconductor | Insulator |
|---|---|---|---|
| Band structure | The conduction band is partly filled with electrons (or the valence and conduction bands overlap) | The valence band is full, with a moderate band gap to the conduction band | The valence band is full, with a large band gap to the conduction band |
| Typical band gap | None | Often around 1 eV (Si about 1.12 eV, Ge about 0.66 eV, GaAs about 1.42 eV). Wide-bandgap semiconductors such as SiC and GaN exceed 3 eV | Large (about 9 eV for SiO2) |
| Typical resistivity at room temperature | Very low (about 1.7×10⁻⁶ Ω·cm for copper) | In between, and varies by orders of magnitude with impurity content (on the order of 10⁵ Ω·cm for pure silicon) | Very high (10¹⁴ Ω·cm or more for SiO2 and similar materials) |
| Charge carriers | Free electrons: 10²² or more per cm³ (about 8.5×10²² for copper) | Two kinds: electrons in the conduction band and holes in the valence band. Their density can be changed greatly by adding impurities | Almost none |
| As temperature rises | Resistance increases (more scattering from lattice vibrations) | In a pure semiconductor, resistance drops sharply (thermally generated carriers increase rapidly) | Resistance stays very high, but falls slightly at high temperature |
| Adding impurities | Conductivity barely changes (resistance rises slightly) | Even tiny amounts change conductivity by orders of magnitude, making it possible to form n-type and p-type regions | Insulation must be preserved; impurities and defects cause leakage current |
| Under light | Almost no change | Light with energy above the band gap creates carriers and increases current (photoconductivity) | Almost no change under visible light (SiO2 is transparent to visible light) |
| Typical materials | Copper, aluminum, gold, tungsten | Silicon, germanium, GaAs, SiC, GaN | SiO2, silicon nitride (Si3N4), alumina (Al2O3), resins |
| Role in semiconductor devices | Interconnects, electrodes, contacts, bonding wires | The parts that control current, such as transistors and diodes | Gate dielectrics, interlayer dielectrics between wiring layers, device isolation, passivation |
Figures are typical orders of magnitude and vary by process generation and product.