Semiconductor physics

Which value is closest to the band gap of germanium (Ge) at room temperature?

  1. AAbout 0.66 eV
  2. BAbout 1.42 eV
  3. CAbout 1.12 eV
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Answer: A. About 0.66 eV

The band gap of germanium is about 0.66 eV at room temperature, smaller than that of silicon (about 1.12 eV). Because of the small band gap, its intrinsic carrier density is high and leakage current tends to increase at high temperatures. About 1.42 eV is the value for GaAs.

  • A. Correct. Ge has a smaller band gap than silicon.
  • B. About 1.42 eV is the value for GaAs (gallium arsenide).
  • C. About 1.12 eV is the value for silicon.
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  2. Which statement is correct when boron (B) is added to silicon as an impurity?
  3. What are the majority carriers in a p-type semiconductor?
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