PN junctions and diodes

What is a common way to make a metal-semiconductor contact ohmic (resistive)?

  1. AHeavily dope the semiconductor surface at the contact so carriers can tunnel through the barrier easily
  2. BMake the semiconductor surface at the contact lightly doped
  3. CInsert a thick oxide between the metal and semiconductor
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Answer: A. Heavily dope the semiconductor surface at the contact so carriers can tunnel through the barrier easily

A Schottky barrier forms between a metal and a semiconductor, but heavily doping the semiconductor makes the barrier extremely thin, letting carriers tunnel through it. This gives a low-resistance contact regardless of current direction (an ohmic contact).

  • A. Correct. Heavy doping thins the barrier and allows tunneling current.
  • B. Light doping makes the barrier thicker and tends to produce a Schottky contact.
  • C. A thick insulator makes current flow harder.
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More PN junctions and diodes questions

  1. In the diode current expression I ∝ exp(qV / nkT), when is the ideality factor n close to 2?
  2. When a reverse bias is applied to an abrupt PN junction, where is the electric field strongest?
  3. Which correctly describes the depletion approximation used in analyzing PN junctions?
  4. How is voltage applied to forward-bias a PN junction diode?
  5. What happens to the width of the depletion layer when the reverse bias applied to a PN junction is increased?