Semiconductor physics

Which correctly compares electron and hole mobility in silicon?

  1. AElectron mobility is higher
  2. BHole mobility is higher
  3. CThey are always equal
Show answer and explanation

Answer: A. Electron mobility is higher

In silicon at room temperature and low doping, electron mobility is about 1400 cm²/V·s and hole mobility about 450 cm²/V·s, so electrons are about three times more mobile. This is why an nMOS can carry more current than a pMOS of the same size.

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More Semiconductor physics questions

  1. Where is the Fermi level located in an n-type semiconductor?
  2. Which correctly describes how the resistivity of an intrinsic semiconductor depends on temperature?
  3. In a semiconductor in thermal equilibrium, what is the product of electron density n and hole density p (n×p)? (ni: intrinsic carrier density)
  4. What causes a diffusion current to flow in a semiconductor?
  5. Which is a typical factor that shortens the minority carrier lifetime in silicon?