Emerging memories

Which effect, being studied to reduce MRAM write energy, changes the magnetic anisotropy of a magnetic layer with a voltage?

  1. AThe Seebeck effect
  2. BVCMA (voltage-controlled magnetic anisotropy)
  3. CThe piezoresistive effect
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Answer: B. VCMA (voltage-controlled magnetic anisotropy)

VCMA (voltage-controlled magnetic anisotropy) is the effect in which applying a voltage across the interface between a thin magnetic layer and an insulator changes how easily the magnetization points in a given direction (magnetic anisotropy). Because it can assist magnetization switching with almost no current, it is expected to cut write energy far below that of current-driven STT writing.

  • A. The Seebeck effect is a thermoelectric effect in which a temperature difference produces a voltage.
  • B. Correct. It changes magnetic anisotropy with voltage.
  • C. The piezoresistive effect is a change in resistance with stress, used in pressure sensors and the like.
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  1. Which correctly describes how MRAM stores data?
  2. Which correctly describes how phase-change memory (PCM) stores data?
  3. Which property does FeRAM (ferroelectric memory) use to store information?
  4. Which correctly describes how ReRAM (resistive memory) stores data?
  5. How is information written in STT-MRAM?