Compound semiconductors

Why is GaN well suited to high-frequency, high-power transistors?

  1. AIts large band gap gives a high breakdown field, and its electron saturation velocity is also high
  2. BIt generates no heat at all
  3. CIt is cheaper than silicon
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Answer: A. Its large band gap gives a high breakdown field, and its electron saturation velocity is also high

GaN's high breakdown field allows operation at high voltage, and its high electron saturation velocity allows large power to be handled at high frequency. In addition, the HEMT structure provides a high-density two-dimensional electron gas, so GaN is used in power amplifiers for mobile base stations and radar.

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More Compound semiconductors questions

  1. What is one main reason SiC is used as the substrate for GaN HEMTs?
  2. Which material is mainly used in the light-emitting layer of deep-ultraviolet LEDs, such as those for sterilization?
  3. Which is a characteristic of multi-junction solar cells, which stack several compound semiconductor layers with different band gaps?
  4. Which impurity is typically used to make p-type layers in GaN?
  5. What is the typical crystal structure of GaN?