Compound semiconductors

What structure do most of today's widely used GaN power devices adopt?

  1. AA lateral HEMT structure built on a Si or similar substrate
  2. BA vertical thyristor structure
  3. CA bipolar transistor structure
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Answer: A. A lateral HEMT structure built on a Si or similar substrate

Most current GaN power devices are made by growing GaN epitaxially on Si or similar substrates as lateral HEMTs using the two-dimensional electron gas. They are widespread in medium-voltage (several hundred volts) power supplies. Vertical devices using GaN substrates are also being researched for higher voltages.

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