PN junctions and diodes

What can be evaluated by measuring the capacitance of a reverse-biased PN junction while varying the voltage (C-V measurement)?

  1. AThe color of emitted light
  2. BOnly the carrier mobility
  3. CThe doping concentration on the lightly doped side and its depth profile
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Answer: C. The doping concentration on the lightly doped side and its depth profile

Increasing reverse bias widens the depletion layer and reduces capacitance. How it changes depends on the doping at the edge of the depletion layer, so C-V measurements can determine the doping concentration on the lightly doped side and its depth profile.

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More PN junctions and diodes questions

  1. Of the two terminals of a PN junction diode, what is the terminal on the p-type side called?
  2. What is the property of a diode that lets current flow easily in one direction but hardly at all in the other called?
  3. Which statement correctly describes the depletion layer of a PN junction in thermal equilibrium?
  4. In which direction is a voltage regulator (Zener) diode normally used in a voltage regulator circuit?
  5. When a sinusoidal AC signal is applied to a half-wave rectifier made of one diode and a resistor, what is the output?