Compound semiconductors

Which is a characteristic of gallium oxide (Ga2O3), under research as a next-generation power semiconductor material?

  1. AIts band gap is smaller than Si's
  2. BIt behaves like a metal at room temperature
  3. CIt has a band gap (about 4.5–4.9 eV) even larger than SiC and GaN
Show answer and explanation

Answer: C. It has a band gap (about 4.5–4.9 eV) even larger than SiC and GaN

Ga2O3 has a band gap of about 4.5–4.9 eV, larger than SiC and GaN, and is expected to allow even higher breakdown voltages. Its crystals can also be grown from the melt, so substrates may be made cheaply. Challenges include the difficulty of making p-type material and its low thermal conductivity.

Practice this topic Back to topic

More Compound semiconductors questions

  1. What is the approximate wavelength of light emitted by GaAs, which has a band gap of about 1.42 eV?
  2. Which correctly describes the typical diameter of wafers for compound semiconductors such as GaAs?
  3. Which is a typical material for high-brightness red to yellow LEDs?
  4. Which correctly describes the quantum well structure used in the light-emitting layers of semiconductor lasers and LEDs?
  5. Which is a characteristic of a VCSEL (vertical-cavity surface-emitting laser)?