PN junctions and diodes

In a PN junction where the p side is far more heavily doped than the n side (a p+n junction), how does the depletion layer spread?

  1. AIt spreads mostly into the lightly doped n side
  2. BIt spreads mostly into the heavily doped p side
  3. CIt always spreads equally into both sides
Show answer and explanation

Answer: A. It spreads mostly into the lightly doped n side

The amount of ionized impurity charge is equal on both sides of the depletion layer. The lightly doped side must be depleted over a wider region to provide the same charge, so the depletion layer spreads mainly into the lightly doped side. This is a basic idea in designing breakdown voltage.

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More PN junctions and diodes questions

  1. Why does a reverse current flow briefly (a reverse recovery time exists) when a PN junction diode is switched from forward to reverse?
  2. How does the built-in (diffusion) potential of a PN junction relate to the doping on each side?
  3. Which correctly describes the mechanism of avalanche breakdown?
  4. In a very heavily doped PN junction, what is the main mechanism of breakdown at low reverse voltage?
  5. What does a bridge rectifier made of four diodes do?